Please use this identifier to cite or link to this item:
http://cmuir.cmu.ac.th/jspui/handle/6653943832/72659
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xiayan Chen | en_US |
dc.contributor.author | Yongkang Xia | en_US |
dc.contributor.author | Ziwei Zheng | en_US |
dc.contributor.author | Xuan Xiao | en_US |
dc.contributor.author | Chenxi Ling | en_US |
dc.contributor.author | Minghao Xia | en_US |
dc.contributor.author | Yue Hu | en_US |
dc.contributor.author | Anyi Mei | en_US |
dc.contributor.author | Rongrong Cheacharoen | en_US |
dc.contributor.author | Yaoguang Rong | en_US |
dc.contributor.author | Hongwei Han | en_US |
dc.date.accessioned | 2022-05-27T08:27:41Z | - |
dc.date.available | 2022-05-27T08:27:41Z | - |
dc.date.issued | 2022-01-25 | en_US |
dc.identifier.issn | 15205002 | en_US |
dc.identifier.issn | 08974756 | en_US |
dc.identifier.other | 2-s2.0-85123944505 | en_US |
dc.identifier.other | 10.1021/acs.chemmater.1c03505 | en_US |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85123944505&origin=inward | en_US |
dc.identifier.uri | http://cmuir.cmu.ac.th/jspui/handle/6653943832/72659 | - |
dc.description.abstract | Formamidinium lead triiodide (FAPbI3) perovskite has attracted intensive research attention due to its ideal band gap and low defect density for photovoltaic applications. Particularly, the existence of non-photoactive δ-phase FAPbI3 has been considered detrimental to regular-structured perovskite solar cells (PSCs). Here, in hole-conductor-free triple-mesoscopic PSCs, we observe that α-phase FAPbI3 transforms to δ-phase FAPbI3 at the perovskite/carbon interface and in situ forms an α/δ-phase junction when the as-fabricated cells are exposed to humid atmosphere. The α/δ-phase junction shows a favorable band alignment and significantly suppresses the charge recombination at the interface. By controlling the relative humidity of the atmosphere, we fabricate FAPbI3-based cells that deliver a champion efficiency of 17.11% with an enhanced open-circuit voltage (VOC) of 1020 mV. This work demonstrates the potential of δ-phase FAPbI3 for benefiting the device performance of PSCs and proposes the concept of constructing perovskite-based junctions at the interface between a perovskite-absorbing layer and charge-transporting layers for enhancing the VOC of PSCs. | en_US |
dc.subject | Chemical Engineering | en_US |
dc.subject | Chemistry | en_US |
dc.subject | Materials Science | en_US |
dc.title | In Situ Formation of δ-FAPbI<inf>3</inf>at the Perovskite/Carbon Interface for Enhanced Photovoltage of Printable Mesoscopic Perovskite Solar Cells | en_US |
dc.type | Journal | en_US |
article.title.sourcetitle | Chemistry of Materials | en_US |
article.volume | 34 | en_US |
article.stream.affiliations | Metallurgy and Materials Research Institute Chulalongkorn University | en_US |
article.stream.affiliations | Wuhan National Laboratory for Optoelectronics | en_US |
article.stream.affiliations | Chiang Mai University | en_US |
Appears in Collections: | CMUL: Journal Articles |
Files in This Item:
There are no files associated with this item.
Items in CMUIR are protected by copyright, with all rights reserved, unless otherwise indicated.